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Power Transistors
2SB929, 2SB929A
Silicon PNP epitaxial planar type
10.00.3 1.50.1
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
For power amplification Complementary to 2SD1252 and 2SD1252A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
1.5max.
1.1max.
10.5min.
2.0
0.80.1
0.5max.
2.540.3 5.080.5 1 2 3
s
Absolute Maximum Ratings (TC=25C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -60 -80 -60 -80 -5 -5 -3 35 1.3 150 -55 to +150 Unit V 2SB929 2SB929A 2SB929
Collector to base voltage Collector to
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2 6.00.3
emitter voltage 2SB929A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V
14.70.5 4.40.5 0 to 0.4
V A A W
10.00.3
1.5-0.4
4.40.5
2.0
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
5.080.5
C C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB929 2SB929A 2SB929 2SB929A 2SB929 2SB929A
(TC=25C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = -1A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 VCE = -60V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -3A, IB = - 0.375A VCE = -10V, IC = - 0.5A, f = 10MHz 30 0.5 1.2 0.3 -60 -80 70 10 min typ
1:Base 2:Collector 3:Emitter N Type Package (DS)
max -200 -200 -300 -300 -1
3.0-0.2
+0.4
+0
Unit A A mA V
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
250
-1.8 -1.2
V V MHz s s s
Rank classification
Q 70 to 150 P 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
Rank hFE1
1
Power Transistors
PC -- Ta
40
2SB929, 2SB929A
IC -- VCE
-6 TC=25C -5 -10 VCE=-4V
IC -- VBE
Collector power dissipation PC (W)
35 30 25 20 15 10 5 (3) 0 0 20 40
Collector current IC (A)
IB=-100mA -4 -80mA -60mA -3 -40mA -30mA -20mA
Collector current IC (A)
(1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W)
-8
-6 25C TC=100C -4 -25C
(1)
-2
-1 (2) 0 60 80 100 120 140 160 0 -2 -16mA -4 -6 -8
-12mA -8mA -4mA
-2
0 -10 -12 0 - 0.4 - 0.8 -1.2 -1.6 -2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
-100 IC/IB=10 -30 -10 -3 -1 10000
hFE -- IC
10000 VCE=-4V 3000 1000 300 100 30 10 3
fT -- IC
VCE=-5V f=10MHz TC=25C
Forward current transfer ratio hFE
1000 300 100 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 25C
TC=100C -25C
- 0.3 TC=100C -25C 25C - 0.1 - 0.03
- 0.01 - 0.01 - 0.03 - 0.1 - 0.3
Transition frequency fT (MHz)
-1 -3 -10
3000
-1
-3
-10
1 - 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
-10 ICP -3 IC 10ms -1 t=1ms 103 Non repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
- 0.3
300ms
1
- 0.1
2SB929
- 0.03
2SB929A
10-1
- 0.01 -1
-3
-10
-30
-100 -300 -1000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2

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